Abstract: Herein, thin-film transistors (TFT) with ITO as the n-channel active layer were prepared on transparent substrates by magnetron sputtering at room temperature. The use of chitosan with an ...
Abstract: Amorphous indium–gallium–zinc oxide (a-IGZO) is a promising channel material for an upper transistor in monolithic three-dimensional devices. Although the field-effect transistors (FETs) ...
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